a-Si : H interface optimisation for thin film position sensitive detectors produced on polymeric substrates
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In this paper we present results concerning the optimisation of the electronic and mechanical properties presented by amorphous silicon (a-Si:H) thin films produced on polyimide (Kapton® VN) substrates with different thicknesses (25, 50 and ) by the plasma enhanced chemical vapour deposition (PECVD) technique. The purpose of this study is to obtain a low defect density as well as low residual stresses (specially at the interface) in order to provide good performances for large area (10 mm wide by 80 mm long) flexible position sensitive detectors. The electrical and optical properties presented by the films will be correlated to the sensor characteristics. The properties of samples have been measured by dark/photoconductivity, constant photocurrent measurements (CPM) and the results have been compared with films deposited on Corning 7059 glass substrates during the same run deposition. The residual stresses were measured using an active optical triangulation and angle resolved scattering. The preliminary results indicate that the thinner polymeric substrate with presents the highest density of states, which is associated to the residual stresses and strains associated within the film.