Bias stress and temperature impact on InGaZnO TFTs and circuits

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11 Citations (Scopus)

Abstract

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

Original languageEnglish
Article number680
JournalMaterials
Volume10
Issue number6
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • A-IGZO TFTs
  • Bias stress
  • Large-area flexible electronics
  • Robust oxide TFT circuits

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