Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature

Research output: Contribution to journalArticlepeer-review

Abstract

Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O2 vol. %; ranging from 0.0 to 17.5%) in the sputtering chamber. The as-deposited
amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96% at 600 nm) observed from the films deposited without oxygen increased toa maximum of 88.01% (3.5 O2 vol. %); whereas this transmittance was decreased with the increasing O2 vol. % to as low as 81.04% (15.6 O2 vol. %); a maximum of 89.80% was obtained from the films annealed at 500 ºC in open air (3.5 O2 vol. %). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O2 vol. % to as high as 3.91 eV (17.5 O2 vol. %). A maximum of 3.92 eV was obtained from the films annealed at 300 ºC in N2:H2 gas atmosphere (17.5 O2 vol. %).
Original languageEnglish
Pages (from-to)1489-1494
Number of pages6
JournalVacuum
Volume82
Issue number12
DOIs
Publication statusPublished - 8 Aug 2008

Keywords

  • Indium oxide
  • Molybdenum doping
  • Thin films
  • RF sputtering

Fingerprint Dive into the research topics of 'Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature'. Together they form a unique fingerprint.

Cite this