Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors

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27 Citations (Scopus)

Abstract

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.
Original languageEnglish
Pages (from-to)640-643
JournalJournal Of Display Technology
Volume7
Issue number12
DOIs
Publication statusPublished - Dec 2011

Keywords

  • Amorphous metal oxide
  • sol gel
  • stability
  • thin-film transistors (TFTs)
  • zinc-tin-oxide (ZTO)

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