Fully transparent ZnO thin-film transistor produced at room temperature

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Abstract

The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.

Original languageEnglish
Pages (from-to)590-594
Number of pages5
JournalAdvanced Materials
Volume17
Issue number5
DOIs
Publication statusPublished - 8 Mar 2005

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