High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

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Abstract

In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5 x 10(-4) Omega cm, with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices.
Original languageEnglish
Pages (from-to)104-107
Number of pages4
JournalThin Solid Films
Volume502
Issue number1-2
DOIs
Publication statusPublished - 28 Apr 2006

Keywords

  • Electrical properties and measurements
  • Indium zinc oxide
  • Optical coatings
  • Sputtering
  • Electron mobilityLi
  • Light transmission
  • Microstructure
  • Magnetron sputtering
  • Nanostructured materials
  • X ray diffraction analysis
  • Nanocrystalline
  • Semiconducting indium compounds

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