This paper deals with high transparent and high conductive oxides based on polycrystalline titanium (Ti) doped (0.5-3 at.%) indium oxide (IO) thin films produced on glass substrates at 400 degrees C by spray pyrolysis technique. X-ray diffraction analysis confirmed the cubic bixbyite structure of indium oxide. A high mobility of similar to 97 cm(2) V-1 s(-1), a carrier concentration of similar to 1.55 x 10(20) cm(-3) and a resistivity of similar to 4.11 x 10(-4) Omega-cm with similar to 83% of transmittance in the wavelength ranging between 400 and 2500 nm were obtained for 2 at.% Ti doping films, rivalling so to the best known transparent conducting oxide based on indium tin oxide. Moreover, the transmittance in the broad wavelength ranging between 400 and 2500 nm is over 83%, leading so to an increasing carrier generation towards the near infrared region of the spectrum, as required for applications such as solar cells. We also notice that increasing the doping concentration widened the optical band gap and caused a small Burstein-Moss shift, due to mobility decrease, as expected.