Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films

Jinzhong Wang, Vincent Sallet, François Jomard, Ana M. Botelho do Rego, Elangovan Elamurugu, Rodrigo Martins, Elvira Fortunato

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Nitrogen (N)-doped ZnO thin films were RF sputtered with different N2 volume (ranging from 10% to 100%) on sapphire (001) substrates. The influence of N2 vol.% on the properties of ZnO films was analyzed by various characterization techniques. The X-ray diffraction studies showed that the films grow along the preferential (002) crystallographic plane and the crystallinity varied with varying N2 vol.%. The films sputtered with 25 vol.% N2 showed better crystallinity. The transmittance was decreased with increasing N2 volume until 25% and was almost constant above 25%. A maximum optical band gap (2.08 eV) obtained for 10 vol.% N2 decreased with increasing N2 volume to reach a minimum of 1.53 eV at 100%. The compositional analysis confirmed the incorporation of N into ZnO films, and its concentration increased with increasing N2 volume to reach a maximum of ∼ 3.7 × 1021 atom/cm3 at 75% but then decreased slightly to 3.42 × 1021 atoms/cm3. The sign of Hall coefficient confirmed that the films sputtered with ≤ 25 vol.% N2 possess p-type conductivity which changes to n-type for > 25 vol.% N2.

Original languageEnglish
Pages (from-to)8780-8784
Number of pages5
JournalThin Solid Films
Volume515
Issue number24 SPEC. ISS.
DOIs
Publication statusPublished - 15 Oct 2007

Keywords

  • Hall measurement
  • SIMS
  • Sputtering
  • XPS
  • ZnO thin films

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