Molybdenum (0.5 at%) doped indium oxide thin films deposited by spray pyrolysis technique were irradiated by 100 MeV O7+ ions with different fluences of 5 x 10(11), 1 x 10(12) and 1 x 10(13) ions/cm(2). Intensity of (222) peak of the pristine film was decreased with increase in the ion fluence. Films irradiated with the maximum ion fluence of 1 x 10(13) ions/cm(2) showed a fraction of amorphous nature. The surface microstructures on the surface of the film showed that increase in ion fluence decreases the grain size. Mobility of the pristine molybdenum doped indium oxide films was decreased from similar to 122 to 48 cm(2)/V s with increasing ion fluence. Among the irradiated films the film irradiated with the ion fluence of 5 x 10(11) ions/cm(2) showed relatively low resistivity of 6.7 x 10(-4) Omega cm with the mobility of 75 cm(2)/V s. The average transmittance of the as-deposited IMO film is decreased from 89% to 81% due to irradiation with the fluence of 5 x 10(11) ions/cm(2).