Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry

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Abstract

In this paper a new approach is presented for the simulation of spectroscopic ellipsometry (SE) data to estimate the level of nickel (Ni) contamination in silicon crystallized by metal induced crystallization (MIC). The method employs the addition of Ni as reference for a Bruggemann effective medium approximation (BEMA) to simulate the optical response of the crystallized silicon. This new approach is sensitive to changes in the initial average metal thickness used on the crystallization process to thickness values as low as 0.05 nm. This corresponds to a volume fraction of 0.24%, confirmed by Rutherford backscattering spectrometry (RBS) where it was observed that the Ni volume fraction detected by SE varies linearly with the metal amount inside the crystallized films determined by RBS.
Original languageEnglish
Title of host publicationJOURNAL OF NON-CRYSTALLINE SOLIDS
Pages2319-2323
Number of pages5
Volume354
DOIs
Publication statusPublished - 1 May 2008
Event22nd International Conference on Amorphous and Nanocrystalline Semiconductors -
Duration: 1 Jan 2007 → …

Conference

Conference22nd International Conference on Amorphous and Nanocrystalline Semiconductors
Period1/01/07 → …

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