Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

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Abstract

This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 901 p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm(2)/V/s, threshold voltage of 2V, on/off ratio larger than 10(7) and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device.
Original languageUnknown
Pages (from-to)2699-2721
JournalPhilosophical Magazine
Volume89
Issue numberSI28-30
DOIs
Publication statusPublished - 1 Jan 2009

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