New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor; for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm(2)/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7x10(7). The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a love threshold voltage, opens new doors for applications in flexible. wearable, disposable portable electronics as well as battery-powered applications.
Original languageEnglish
Title of host publicationMaterials Science Forum
Pages348-352
Number of pages5
Volume587-588
DOIs
Publication statusPublished - 1 Jan 2008
Event13th Conference of the Sociedade-Portuguesa-de-Materiais / 4th International Materials Symposium -
Duration: 1 Jan 2007 → …

Conference

Conference13th Conference of the Sociedade-Portuguesa-de-Materiais / 4th International Materials Symposium
Period1/01/07 → …

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