Indium molybdenum oxide (IMO) thin films were deposited by RF magnetron sputtering on glass substrates at room temperature. The deposition and argon partial pressures were maintained at 6.0 x 10(-1) Pa and 3.0 x 10(-1) Pa, respectively. The oxygen partial pressure (OPP) was varied in the range 1.0-6.0 x 10(-3) Pa. The films were sputtered at 40 W for 30 min using the target consisted In(2)O(3) (98 wt%): Mo (2 wt%). The films are polycrystalline with a slight preferential orientation along (222) plane. The crystallinity is increased with the increasing OPP. The negative sign of Hall coefficient confirmed the n-type conductivity. A maximum mobility similar to 19 cm(2) V(-1) S(-1) is obtained for the films deposited with OPP of 3.6 x 10(-3) Pa. The average visible transmittance calculated in the wavelength ranging 500-800 nm is ranging between 2% and 77%. The optical band gap calculated from the absorption data is varied between 3.69 and 3.91 eV. A striking feature is that the work function of the films is wide ranging 4.61-4.93 eV. A possibility of using the produced IMO films as transparent conducting oxide in photovoltaic applications such as organic solar cells is discussed in this article.