This work deals with the study of the role of intra-gap density of states on the colour selection of the collection spectrum of glass/ITO/a-Six:C1-x:H/Al Schottky photodiodes. In order to optimise the voltage colour selection and to study the influence of intragap density of states in the final device performances, different undoped a-Six:C1-x:H films (1 μm thick) have been produced in a conventional Plasma Enhanced Chemical Vapour Deposition (PECVD) system using silane and a controlled mixtures of silane and methane as gas sources. The properties of the films were analysed by dark conductivity measurements, infrared spectroscopy, visible spectroscopy and constant photocurrent method (CPM), to determine the valence controllability and to correlate the silicon carbide layer composition with the performances of the devices. The performances obtained concerning the spectral response of the devices were correlated with the carbon content and the density of states of the a-Six:C1-x:H films.
|Number of pages||4|
|Journal||Bioceramics 18, Pts 1 And 2|
|Publication status||Published - 2002|
- Amorphous Silicon Carbide Devices
- Colour Selection
- Density of States
- Schottky Junction