Abstract
The aim of this work is to interpret the role of the lateral leakage current on the a-Si:H solar cell performances (J-V characteristics, responsivity and the apparent device degradation behaviour), under low illumination conditions.
Original language | English |
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Pages (from-to) | 587-590 |
Number of pages | 4 |
Journal | Proceedings Of The Ieee |
Volume | 1 |
Publication status | Published - 1994 |