This work reports on the fabrication process and performances presented by metal insulator semiconductor (MIS) linear position sensitive detectors (PSD) with an active length of 6cm. The use of long sensitive areas allows the PSD to achieve higher resolution without the need of a highly accurate light spot integration mechanism. The PSD is built in a multilayered structure consisting of Cr/a-Si:H (n(+) doped)/a-Si:H (intrinsic)/SiO(x) (passivation layer)/Au, where the active a-Si:H layers were deposited by a modified triode plasma enhanced chemical vapour deposition (MTPECVD), which allows the deposition of highly electronic grade material with a low (approximate to 1 x 10(15)cm(-3)) defect density inferred by CPM. The sensor linearity and sensitivity shows dependence on the sensor width to length ratio and on the value of load resistance. Sensitivities of more than 30mV/crn were achieved with linearity near 99%. Besides that, this type of MIS structure allows an improved spectral response near the UV region and has the maximum response at 540nm.