The properties of a-Si: H films deposited on Mylar substrates by hot-wire plasma assisted technique

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Abstract

In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 Å/s, ημτ product of 1.6 × 10-7 cm2/V, photoconductivity to dark conductivity ratio of 1 × 104 (at AM1.5 radiation), and a dark conductivity of about 10-10 (Ω cm)-1 for substrate temperature of 130 °C, hydrogen dilution of 99%, filament temperature of 1700 °C, and rf power of 100 W.

Original languageEnglish
Pages (from-to)30-35
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume299-302
DOIs
Publication statusPublished - Apr 2002

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