In this paper we present results of intrinsic/non doped zinc oxide films deposited at room temperature by rf magnetron sputtering able to be used as a truly semiconductor on electronic devices like ozone gas sensors and ultra-violet detectors. The produced films are polycrystalline with a c-axis preferential orientation parallel to the substrate. The films' resistivity varies from 4.0x10(-2) Omega cm to 1.0x10(-9) Omega cm, depending on the deposition conditions used (rf power density and oxygen partial pressure), which turns not affecting the optical properties (in average a transmittance of around 85 % and an optical band gap of about 3.44 eV, independent of the deposition conditions used). When exposed to UV light the sensor response based on these films may exceed more than 5 orders of magnitude, recovering to the initial state in the presence of ozone. The sensitivity of the films is improved when the oxygen partial pressure increases and the rf power density used decreases, due to changes on the structural properties of the films.
|Title of host publication||Materials Research Society Symposium Proceedings|
|Publication status||Published - 1 Jan 2006|
|Event||Symposium on Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications held at the 2006 MRS Spring Meeting - |
Duration: 1 Jan 2006 → …
|Conference||Symposium on Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications held at the 2006 MRS Spring Meeting|
|Period||1/01/06 → …|